硅单电子晶体管的制造及特性

报道了采用电子束光刻、反应离子刻蚀及热氧化等工艺,在p型SIMOX(separation by implanted oxygen)硅片上成功制造的一种单电子晶体管.特别是,提供了一种制造量子线和量子点的工艺方法,在器件的电流-电压特性上观测到明显的库仑阻塞效应和单电子隧穿效应.器件的总电容约为9.16aF.在77K工作温度下,也观测到明显的电流-电压振荡特性.

Fabrication and Characteristics of a Si-Based Single Electron Transistor

Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (d I ds /d V ds ) oscillations and the Coulomb staircases in the source drain current ( I ds ) are shown clearly dependent on the source drain voltage at 5 3K.The I ds V gs (gate voltage) oscillations are observed from the I ds V gs characteristics as a function of V gs at different temperatures and various values of V ds .For a SET whose total capacitance is about 9 16aF,the I ds V gs oscillations can be observed at 77K.