Low thermal budget solid phase epitaxial growth of CaF2 on Si (111) substrates |
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| Authors: | R. Singh R. P. S. Thakur A. J. Nelson S. C. Gebhard A. B. Swartzlander |
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| Affiliation: | (1) School of Electrical Engineering and Computer Science, University of Oklahoma, 73019 Norman, Oklahoma;(2) Solar Energy Research Institute, 80401 Golden, CO |
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| Abstract: | As a low thermal budget processing technique, we have used in-situ rapid isothermal processing for growing epitaxial CaF2 films on Si (111) substrates by solid phase epitaxy. Ex-situ rapid isothermal annealed films are polycrystalline in nature. Absorption of gases during ex-situ annealing inhibits solid phase epitaxial growth and highlights the importance of in-situ processing. |
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| Keywords: | II-A fluoride solid phase epitaxy in-situ processing rapid isothermal processing |
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