Preparation and characterization of indium oxide (In2O3) films by activated reactive evaporation |
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Authors: | M D Benoy B Pradeep |
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Affiliation: | (1) Department of Physics, Cochin University of Science and Technology, 682 022 Kochi, India |
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Abstract: | The electrical and optical properties of In2O3 films prepared at room temperature by activated reactive evaporation have been studied. Hall effect measurements at room
temperature show that the films have a relatively high mobility 15 cm2v−1s−1, high carrier concentration 2·97 × 1020/cm3, with a low resistivityρ = 1·35 × 10−3 ohm cm. As-prepared film is polycrystalline. It shows both direct and indirect allowed transitions with band gaps of 3·52eV
and 2·94eV respectively. |
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Keywords: | Thin films semiconductors oxides evaporation method |
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