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CeO2掺杂制备Ba0.9Ca0.1Ti1-xSnxO3压电陶瓷的结构及电性能
引用本文:尹奇异,田长安,胡舒婷,王成泽,王婷婷,阳杰,吉冬冬,刘洋. CeO2掺杂制备Ba0.9Ca0.1Ti1-xSnxO3压电陶瓷的结构及电性能[J]. 材料导报, 2017, 31(22): 26-29, 49. DOI: 10.11896/j.issn.1005-023X.2017.022.006
作者姓名:尹奇异  田长安  胡舒婷  王成泽  王婷婷  阳杰  吉冬冬  刘洋
作者单位:合肥学院化学与材料工程系 ,合肥,230601
基金项目:安徽省高等学校自然科学研究项目(KJ2017A533);合肥学院优秀青年人才支持项目(16YQ04RC);安徽省高等学校质量工程项目(2016ckjh161)
摘    要:采用传统的陶瓷烧结技术,通过添加0.15%(摩尔分数)CeO2,在1120℃烧结2h,成功制备了新型无铅压电陶瓷Ba0.9 Ca0.1 Ti1-x Snx O3,并且检测了陶瓷样品的微结构和电性能.XRD显示所有陶瓷样品均具有纯的钙钛矿结构,在室温下为典型的四方相,SEM显示适量添加锡离子可以提高陶瓷致密性.在室温下,锡离子改性的BaTiO3基压电陶瓷在x=0.02处显示了优异的压电、介电和铁电性能(d33=276 pC/N,kp=46%,εr=3678,tanδ=2.4%,Pr=18.2μC/cm2,EC=1.12 kV/mm).这些优异的检测结果证实适当添加锡离子能改善BaT iO3基压电陶瓷的电性能.

关 键 词:无铅压电陶瓷  压电性  铁电性  介电性能  CeO2掺杂

Structure and Electrical Properties of Piezoelectric Ceramics Ba0.9Ca0.1Ti1-xSnxO3 Sintered with CeO2 Doping
YIN Qiyi,TIAN Chang''an,HU Shuting,WANG Chengze,WANG Tingting,YANG Jie,JI Dongdong and LIU Yang. Structure and Electrical Properties of Piezoelectric Ceramics Ba0.9Ca0.1Ti1-xSnxO3 Sintered with CeO2 Doping[J]. Materials Review, 2017, 31(22): 26-29, 49. DOI: 10.11896/j.issn.1005-023X.2017.022.006
Authors:YIN Qiyi  TIAN Chang''an  HU Shuting  WANG Chengze  WANG Tingting  YANG Jie  JI Dongdong  LIU Yang
Affiliation:Department of Chemistry and Materials Engineering, Hefei University, Hefei 230601,Department of Chemistry and Materials Engineering, Hefei University, Hefei 230601,Department of Chemistry and Materials Engineering, Hefei University, Hefei 230601,Department of Chemistry and Materials Engineering, Hefei University, Hefei 230601,Department of Chemistry and Materials Engineering, Hefei University, Hefei 230601,Department of Chemistry and Materials Engineering, Hefei University, Hefei 230601,Department of Chemistry and Materials Engineering, Hefei University, Hefei 230601 and Department of Chemistry and Materials Engineering, Hefei University, Hefei 230601
Abstract:New lead-freepiezoelectricceramicsBa0.9Ca0.1Ti1 - xSnxO3 with0.15% (molefraction)CeO2doping wereprepared via the conventional sintering technique at 1120 ℃ for 2 h ,and the products' microstructure and electrical properties were investigated . X-ray diffraction indicates that all the ceramics possess a pure perovskite structure with typical tetragonal symmetry ,SEM micro-graphs suggest that the appropriate addition amount of Sn can enhance the compactness .The Sn-modified BaTiO3-based ceramics exhibit an optimum piezoelectric ,dielectric and ferroelectric properties (d33 =276 pC/N ,kp =46% ,εr =3678 ,tanδ=2 .4% , Pr =18 .2 μC/cm2 ,EC =1 .12 kV/mm) at room temperature while x=0 .02 .These excellent results demonstrate that appropriate amount of Sn can further improve the electrical properties of BaTiO3-based piezoelectric ceramics .
Keywords:lead-free piezoelectric ceramic   piezoelectricity   ferroelectricity   dielectric properties   CeO2 doping
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