Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHzcutoff frequency |
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| Authors: | Shinohara K. Yamashita Y. Endoh A. Hikosaka K. Matsui T. Mimura T. Hiyamizu S. |
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| Affiliation: | Commun. Res. Lab., Minist. of Posts & Telecommun., Tokyo; |
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| Abstract: | An excellent cutoff frequency (ft) as high as 400 GHz was successfully realized in 45-nm-gate pseudomorphic InGaAs/InAlAs high electron mobility transistors (HEMTs). An additional vertical gate-recess suppressed short-channel effects, while keeping good pinchoff characteristics. Gate length (Lg) dependence of electron transit time (τtransit) implied an increased saturation velocity (υs) of 3.6×107 cm/s in the developed pseudomorphic HEMTs. This ft is the highest value ever reported for any transistors to date |
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