| 5管SRAM单元的抗辐射性能研究 |
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| 引用本文： | 吴振宇,陈书明,黄鹏程,宋睿强.5管SRAM单元的抗辐射性能研究[J].微电子学,2015,45(6):796-799. |
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| 作者姓名： | 吴振宇 陈书明 黄鹏程 宋睿强 |
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| 作者单位： | 国防科技大学, 长沙 410073,国防科技大学, 长沙 410073,国防科技大学, 长沙 410073,国防科技大学, 长沙 410073 |
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| 基金项目： | 国家自然科学基金资助项目(61376109) |
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| 摘 要： | 利用3D TCAD仿真,在45 nm 体硅工艺下,对5管SRAM单元和传统6管SRAM单元的抗辐射性能进行了对比研究。结果表明,5管SRAM单元的敏感面积更小,由该单元构成的SRAM阵列更难发生多位翻转。提出了一种带额外保护环的5管SRAM单元抗辐射加固策略,这种加固策略没有面积开销,模拟结果证实了该加固策略的有效性。
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| 关 键 词： | 5管SRAM单元 单粒子翻转 多位翻转 电荷收集 |
| 收稿时间： | 2014/9/27 0:00:00 |
Research on the Radiation Robustness of 5T SRAM Cell |
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| WU Zhenyu,CHEN Shuming,HUANG Pengcheng and SONG Ruiqiang.Research on the Radiation Robustness of 5T SRAM Cell[J].Microelectronics,2015,45(6):796-799. |
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| Authors: | WU Zhenyu CHEN Shuming HUANG Pengcheng and SONG Ruiqiang |
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| Affiliation: | National University of Defense Technology, Changsha 410073, P. R. China,National University of Defense Technology, Changsha 410073, P. R. China,National University of Defense Technology, Changsha 410073, P. R. China and National University of Defense Technology, Changsha 410073, P. R. China |
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| Abstract: | Using 3D TCAD simulation, the radiation robustness of 5T SRAM cell was compared with that of the conventional 6T SRAM cell in 45 nm bulk CMOS process. The research indicated that the 5T SRAM cell had a smaller sensitive volume. Multiple cells upset(MCU) was also less likely to happen in 5T SRAM. Moreover, a kind of 5T SRAM with additional guard ring hardening scheme was proposed. This hardening scheme could make full use of the chip area and its effectiveness was verified by the simulation results. |
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