| 微空气桥隔离的自对准AlGaAs/GaAs异质结双极晶体管 |
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| 引用本文： | 严北平,张鹤鸣,戴显英. 微空气桥隔离的自对准AlGaAs/GaAs异质结双极晶体管[J]. 电子学报, 2000, 28(11): 132-134 |
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| 作者姓名： | 严北平 张鹤鸣 戴显英 |
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| 作者单位： | 西安电子科技大学微电子学研究所,西安 710071 |
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| 基金项目： | 国家自然科学基金 !(No .696760 33) |
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| 摘 要： | 利用微空气桥隔离和自对准技术成功地研制出了自对准结构的AlGaAs/GaAs异质结双极晶体管.器件展现出良好的直流和高频特性.对于发射极面积为2μm×15μm的器件,直流电流增益大于10,失调电压(Offsetvoltage)200mV;电流增益截止频率fT大于30GHz,最高振荡频率fmax约为50GHz.
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| 关 键 词： | AlGaAs/GaAs异质结双极晶体管 自对准结构 微空气桥隔离 |
| 文章编号： | 0372-2112(2000)11-0132-03 |
| 收稿时间： | 1999-11-12 |
Self-aligned AIGaAs/GaAs HBT with Micro-airbridge Isolation |
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| YAN Bei-ping,ZHANG He-ming,DAI Xian-ying. Self-aligned AIGaAs/GaAs HBT with Micro-airbridge Isolation[J]. Acta Electronica Sinica, 2000, 28(11): 132-134 |
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| Authors: | YAN Bei-ping ZHANG He-ming DAI Xian-ying |
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| Affiliation: | Microelectronics Institute,Xidian University,Xi'an 710071,China |
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| Abstract: | A micro-airbridge isolation technique has been developed and applied to the AlGaAs/GaAs heterojunction bipolar transistors.Self-aligned AlGaAs/GaAs HBTs with excellent dc and microwave performance have been successfully realized.For the device with 2μm×15μm emitter,a current gain more than 10 and an offset voltage of 200mV can be obtained; the current gain cutoff frequency,fT,is higher than 30GHz and the maximum oscillation frequency,fmax,is about 50GHz. |
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| Keywords: | AlGaAs/GaAs HBT self aligned structure micro airbridge isolation |
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