Low energy Xe+ ion beam machining of ULE® substrates for EUVL projection optics – Evaluation of high-spatial frequency roughness |
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| Authors: | Hironori Endo Takuro Inaba Shahjada A Pahlovy Iwao Miyamoto |
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| Affiliation: | 1. Higher Institute for Technological Studies, 5070 Ksar Hellal, Tunisia;2. Preparatory Institute for Engineering Studies, 5000 Monastir, Tunisia;3. Laboratory of Condensed Matter and Nanosciences, Department of Physics, Faculty of Science of Monastir, Road of the Environment, 5019 Monastir, Tunisia;4. College of Sciences and Arts in Oqlatu’s Soqoor, Qassim University, Kingdom of Saudi Arabia;1. IPEN/Universidade de Sao Paulo, Sao Paulo, Brazil;2. ICMM-CSIC, Madrid, Spain;1. Department of Material Science and Engineering, Holden Hall, Virginia Tech, Blacksburg, VA 24060, USA;2. Sri Guru Granth Sahib World University, Fatehgarh Sahib 140406, India;1. Material Research Center, Missouri University of Science and Technology, Rolla, MO 65409, USA;2. Mo-Sci Corporation, 4040 HyPoint North, Rolla, MO 65401, USA;1. Al-Azhar University, Faculty of Science, Physics Department, 11884, Cairo, Egypt;2. Cairo University, Faculty of Science, Physics Department, Giza, Egypt;3. Housing and Building Research Center, Building Physics Institute, Giza, Egypt |
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| Abstract: | Ion beam figuring (IBF) is a suitable technology for the final shape correction of substrates used in the projection optics of EUVL tools. In order to achieve HSFR below 0.10 nm rms, we have conducted our research on ion beam machining of the ULE® substrate by Xe+ ion beam with energy less than 2 keV. The HSFR of the unprocessed ULE® surface was 0.06 nm rms, whereas the HSFR of the ULE® substrate machined by under 0.7 keV Xe+ ion beam was less than 0.08 nm rms. This HSFR (0.08 nm rms) is lower than that (0.10 nm rms) of the ULE® substrate machined with Ar+ ion beam. Therefore, Xe+ ion beam with energy under 0.7 keV can be used for figure error correction of the ULE® substrates for projection optics used in commercially available EUVL exposure tools. |
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