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22 nm silicon nanowire gas sensor fabricated by trilayer nanoimprint and wet etching
Authors:Chen Gao  Shao-Ren Deng  Jing Wan  Bing-Rui Lu  Ran Liu  Ejaz Huq  Xin-Ping Qu  Yifang Chen
Affiliation:1. State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China;2. Micro and Nanotechnology Centre, Rutherford Appleton Laboratory, STFC, Didcot, Oxon OX11 0QX, UK;1. School of Electronic Information Engineering, Tianjin University, 92 Weijin road, Tianjin city 300072, China;2. Key Laboratory for Advanced Ceramics and Machining Technology,Ministry of Education, School of Materials Science and Engineering, Tianjin University, 92 Weijin road, Tianjin city 300072, China;1. School of Microelectronics, Tianjin University, Tianjin 300072, China;2. Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin 300072, China;3. Key Laboratory for Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China;1. The Research Institute of Industrial Science, Hanyang University, Seoul, 133-791, Republic of Korea;2. Division of Materials Science and Engineering, Hanyang Uniersity, Seoul, 04763, Republic of Korea;3. Department of Materials and Metallurgical Engineering, Kangwon National University, 346 Joongang-ro, Samcheok, Gangwon-do 25913, Republic of Korea;4. Department of Materials Science and Engineering, Inha University, Incheon, 402-751, Republic of Korea
Abstract:In this work, we demonstrate the fabrication of silicon nanowires down to 22 nm wide using trilayer nanoimprint lithography and wet etching. Using the same template prepared by E-beam lithography (EBL), nanowires with top width of 22 nm and 75 nm are fabricated on boron-doped top silicon layer of SOI substrate. The two samples are tested in 250 ppm NO2 ambient for gas detection. The 22 nm wide one shows a much higher relative sensitivity than the 75 nm wide one. The simulation which calculates the carrier density by solving Poisson equation was carried out and the results well explain the sensitivity disparity between the two samples.
Keywords:
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