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Evaluation of zinc interstitial in Si-ion implanted ZnO bulk single crystals by a Rutherford backscattering study: An origin of low resistivity
Authors:Y. Izawa  K. Matsumoto  K. Kuriyama  K. Kushida
Affiliation:1. College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584, Japan;2. Department of Arts and Science, Osaka Kyoiku University, Kashiwara, Osaka 582-8582, Japan
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