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Inverse problem solving and optical index determination of resist films by ellipsometry
Authors:JH Tortai  A Akbalik Rapine  S Soulan  P Schiavone
Affiliation:1. LTM/CNRS, Grenoble 38054, France;2. UMI2958 CNRS-Georgia Tech, Georgia Institute of Technology, Atlanta, GA 30332, USA;1. Department of Electrical Engineering, Institute for Computer Science, Czestochowa University of Technology, 17 Al. Armii Krajowej, Czestochowa PL-42200, Poland;2. Lviv Polytechnic National University, 12 Bandery Street, 79013 Lviv, Ukraine;3. Karpenko Physico-Mechanical Institute of NASU, 5 Naukova Street, 79060 Lviv, Ukraine;1. Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia;2. Reshetnev Siberian State Aerospace University, Krasnoyarsk 660037, Russia;3. Siberian Federal University, Krasnoyarsk 660041, Russia;4. Achinsk Branch of Krasnoyarsk State Agrarian University, Achinsk 662150, Russia;1. Department of Physics and Astronomy, Texas Tech University, Lubbock, TX 79409, USA;2. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, USA;3. Nano Tech Center, Texas Tech University, Lubbock, TX 79409, USA;1. College of Applied Sciences & Beijing Engineering Research Center of Precision Measurement Technology and Instrument, Beijing University of Technology, Beijing 100124, China;2. The Pilot College of Beijing University of Technology, Beijing 101101, China
Abstract:Spectroscopic ellipsometry (SE) is known to be a technique of great sensitivity in thickness determination of thin layers. The sensitivity is said to be close to some angstrom when optical indexes of materials are perfectly known. However, for resist films, those optical indexes are unknown and can vary from one process to another. Optical indexes and film thicknesses are determined by using Fresnel laws in order to calculate theoretical ellipsometry signatures and by solving the inverse problem. This article presents two strategies developed by LTM in order to accurately determine optical indexes and the thickness of resist films.
Keywords:
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