Ellipsometric,XPS and FTIR study on SiCN films deposited by hot-wire chemical vapor deposition method |
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| Affiliation: | 1. BCMC College of Engineering & Technology, Jessore 7400, Bangladesh;2. Kyushu Institute of Technology Fukuoka, Kitakyushu, Fukuoka Prefecture 804-0015, Japan;1. College of Information, GuangDong Ocean University, Zhanjiang 524088, China;2. School of Energy Science and Engineering, Central South University, Changsha 410083, China;3. Forty-eighth Research Institute of China Electronics Technology Group Corporation, Changsha 410111, China;1. Institute for Problems of Materials Sciences NAS of Ukraine, 3, Krzhyzhanovsky Str., 03142 Kyiv, Ukraine;2. Institute of Physics NAS of Ukraine, 46, Nauki ave., 03028 Kyiv, Ukraine |
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| Abstract: | SiCN films were deposited by hot-wire chemical vapor deposition (HWCVD) method using hexamethyldisilazane (HMDS). These films contain a lot of oxygen. Using HMDS with NH3, low oxygen content films can be obtained. It is found from the structure determination that Si‐N bonds are the vital bonds of SiCN films. It is also found that the highest amount of Si‐N bonds content SiCN has the highest amount of nitrogen and the amount of nitrogen is directly related to the properties of the films. The amount of oxygen, film density, the refractive index and optical band gap are strong functions of the amount of nitrogen in the films. With increasing nitrogen, the amount of oxygen decreases and with decreasing nitrogen, the amount of oxygen increases. The film density and optical band gap also increase with increasing nitrogen. On the other hand with increasing nitrogen, the refractive index decreases. |
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| Keywords: | Hot-wire CVD SiCN Si‐N bonds Nitrogen Film structure Film density Refractive index Optical band gap |
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