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Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT
Affiliation:1. Department of Electronics and Communication Engineering, Jamia Millia Islamia (Central University) New Delhi, India;2. Electrical Engineering Dept., Faculty of Engineering, Jouf University, Sakaka 72388, Saudi Arabia;1. School of Opt-Electronic Engineering, Zaozhuang University, Zaozhuang 277160, PR China;2. Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan;3. School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, PR China;1. School of Information and Software Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, People''s Republic of China;2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People''s Republic of China;3. Faculty of Engineering, University of New South Wales, Sydney, NSW2052, Australia;1. Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science (IISc), Bengaluru, India;2. Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A*STAR), Singapore
Abstract:In this paper a detail insight into the role of oxide/barrier interfacial charges (Nox) for shifting the threshold voltage (VT) of AlN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) is gained. A model is developed for VT considering all possible charges arise at different interfaces. To validate the model the proposed device is simulated by considering different insulators and Nox into account. It is very fascinating to observe that VT is highly sensitive towards change in Nox at higher oxide dimensions, whereas at lower dimensions Nox has very negligible effect. Normally-off operation can be achieved by increasing or decreasing Nox in MOSHEMT with Al2O3 or HfO2 as gate dielectric respectively.
Keywords:2DEG  AlN/GaN  MOSHEMT  Normally-off  Oxide interfacial charge  TCAD
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