Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field |
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| Affiliation: | 1. Institut de Ciència dels Materials (ICMUV), Universitat de València, E-46071 Vαlència, Spain;2. CEA, INAC-SP2M, “Nanophysique et semiconducteurs” Group, F-38000 Grenoble, France;1. Université de Gabès, Laboratoire de Physique des Matériaux et des Nanomatériaux appliqué à l’environnement, Faculté des Sciences de Gabès, Cité Erriadh, Zrig, 6072, Gabès, Tunisia;2. Université de Tunis, Ecole Nationale Supérieure d’ingénieurs de Tunis (ENSIT), Tunisia;3. Université de Carthage, Laboratoire des Matériaux, Molécules et Applications IPEST, BP 51, La Marsa, 2070, Tunis, Tunisia;1. Leibniz-Institut für Analytische Wissenschaften – ISAS – e. V., Schwarzschildstraße 8, 12489 Berlin, Germany;2. Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, 10623 Berlin, Germany;1. Université Côte d’Azur, CNRS, CRHEA, Rue Bernard Grégory, 06560 Valbonne, France;2. Saint Gobain Lumilog, 2720 Chemin Saint Bernard, 06220 Vallauris, France |
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| Abstract: | The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, results in an additional 30% reduction of the internal electric field and gives a better account of the observed optical features. |
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| Keywords: | Non-polar quantum dots Photoluminescence Electronic structure Stark effect Stacking faults |
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