Temperature dependent dielectric studies of Ni/n-GaP Schottky diodes by capacitance and conductance measurements |
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| Affiliation: | 1. Department of Applied Physics, Indian School of Mines, Dhanbad 826004, India;2. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India;1. Facultad de Química, Materiales-Energía, Universidad Autónoma de Querétaro, Querétaro 76010, México;2. Departamento de Ingeniería Eléctrica, Sección de Estado Sólido, CINVESTAV-IPN, Apdo. Postal 14-740, México D.F. 07360, México;1. University of Portsmouth, Department of Advanced Material Engineering, Portsmouth, UK;2. Kirklareli University, Department of Physics, Kirklareli, Turkey;3. Munzur University, Department of Metallurgical and Materials Engineering, Tunceli, Turkey;4. Sakarya University, Department of Metallurgical and Materials Engineering, Sakarya, Turkey;5. International University of Sarajevo, Department of Mechanical Engineering, Sarajevo, Bosnia and Herzegovina;6. Yildiz Technical University, Department of Metallurgical and Materials Engineering, ?stanbul, Turkey;7. Bülent Ecevit University, Department of Metallurgical and Materials Engineering, Zonguldak, Turkey;8. King Saud University, College of Physics And Astronomy, Riyadh, Saudi Arabia;9. F?rat University, Department of Physics, Elazig, Turkey;1. Department of Physics, Jadavpur University, Kolkata, 700032, India;2. Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata, 700064, India;3. Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India |
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| Abstract: | The dielectric properties of Ni/n-GaP Schottky diode were investigated in the temperature range 140–300 K by capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. The effect of temperature on series resistance (Rs) and interface state density (Nss) were investigated. The dependency of dielectric constant (ε′), dielectric loss (ε′′), loss tangent (tan δ), ac conductivity (σac), real (M′) and imaginary (M′′) parts of the electric modulus over temperature were evaluated and analyzed at 1 MHz frequency. The temperature dependent characteristics of ε′ and ε′′ reveal the contribution of various polarization effects, which increases with temperature. The Arrhenius plot of σac shows two activation energies revealing the presence of two distinct trap states in the chosen temperature range. Moreover, the capacitance–frequency (C–f) measurement over 1 kHz to 1 MHz was carried out to study the effect of localized interface states. |
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| Keywords: | Ni/GaP Schottky contacts Capacitance–voltage Conductance–voltage Dielectric properties Metal–semiconductor interface |
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