Optimization of a-Si:H absorber layer grown under a low pressure regime by plasma-enhanced chemical vapor deposition: Revisiting the significance of the p/i interface for solar cells |
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| Affiliation: | 1. Network of Institutes for Solar Energy (CSIR-NISE), Physics of Energy Harvesting Division, CSIR–National Physical Laboratory, India;2. Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, New Delhi, Dr. K.S. Krishnan Marg, New Delhi 110012, India;1. Chemistry Department, University of Dar es Salaam, P.O. Box 35061, Dar es Salaam, Tanzania;2. Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, South Africa;1. College of Chemistry and Chemical Engineering, Mianyang Normal University, Mianyang 621000, PR China;2. Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, PR China;1. CSIR – Central Glass & Ceramic Research Institute, 196, Raja S C Mullick Road, Kolkata 700032, West Bengal, India;2. Department of Instrumentation Science, Jadavpur University, Kolkata 700032, West Bengal, India;1. Department of Physics, Faculty of Art and Science, Harran University, 63300 Sanliurfa, Turkey;2. Central Laboratory, Harran University, 63300 Sanliurfa, Turkey;1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;2. Engineering Research Center on Solid-State Lighting and its Informationisation of Guangdong Province, South China University of Technology, Wushan Road, Guangzhou 510640, China;3. Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China;1. Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja-shi, Okayama 719-1197, Japan;2. Technology, GlobalWafers Japan Co., Ltd., 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan;3. Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, Ghent B-9000, Belgium |
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| Abstract: | In this study, we revisited the significance of the p/i interface for hydrogenated amorphous silicon (a-Si:H) solar cells. Initially, intrinsic and extrinsic (p and n type) a-Si:H layers were grown in a low pressure regime (0.5–0.1 Torr) using the conventional RF plasma-enhanced chemical vapor deposition process and their opto-electronic properties were optimized for the fabrication of p–i–n a-Si:H solar cells. Subsequently, we obtained new insights in terms of the activation energy and band gap at the p/i interface in these solar cells. The absorber layers deposited at pressures of 0.23 Torr and 0.53 Torr had the highest photosensitivity with a band absorption edge at ~700 nm. Furthermore, the photosensitivity was shown to be correlated with the estimated diffusion length, which effectively defined the carrier transport within the solar cell layers. Moreover, the cell efficiency increased from 1.53% to 5.56% due to the improved p/i interface as well as the higher photosensitivity of the intrinsic/absorber layer. |
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| Keywords: | Amorphous silicon p/i interface Plasma-enhanced chemical vapor deposition Solar cell |
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