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Investigations on the nanostructures of GaN,InN and InxGa1?xN
Affiliation:1. Crystal Growth Centre, Anna University, Chennai 600025, India;2. IMEM-CNR, Parco Area delle Scienze 37/A, 43010 Parma, Italy;1. Vaccine Basic Research, Merck Research Laboratories, West Point, PA, United States;2. Bioprocess R&D, Merck Research Laboratories, West Point, PA, United States;3. Pfizer Vaccine Research and Development, Collegeville, PA, United States;4. Vaccine Basic Research, Merck Research Laboratories, West Point, PA, United States;1. Department of Physics, University of Zanjan, Zanjan, 45371-38791, Iran;2. Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603, Kuala Lumpur, Malaysia;3. Computation Nanotechnology Research Lab (CNRL), Department of Physics, College of Education, Salahaddin University-Erbil, 44002, Erbil, Kurdistan Region, Iraq;4. Physics Education Department, Faculty of Education, Tishk International University, 44001, Erbil, Iraq;5. Micro-Nano System Centre, School of Information Science & Technology, Fudan University, Shanghai, 200433, China;1. CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China;2. School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China;3. State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute Co. Ltd., Beijing 102209, China;4. Beijing Aerospace Automatic Control Institute, National Key Laboratory of Science and Technology on Aerospace Intelligence Control, Beijing 100854, China;5. Graduate School of Electrical and Electronic Engineering, Chiba University, 1-33 Yayoicho, Inage-ku, Chiba 263-8522, Japan;6. Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, China;7. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA;1. Department of Electronics and Communication Engineering, SRM Institute of Science and Technology, Chennai 603203, India;2. Microelectronics & VLSI Design Group, Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam 788010, India;1. Department of Physics, Chonnam National University, Gwangju, 61186, Republic of Korea;2. Centre for Materials for Electronics Technology (C-MET), Department of Electronics and Information Technology (DeitY), Govt. of India, Pune, 411008, India
Abstract:A controllable approach to the formation of III- nitride nanocrystalline structures using hydrothermal assisted method is presented. The structural and morphological properties of the prepared nanostructures are analyzed using X-ray diffraction, Fast Fourier Transformation and transmission electron microscope techniques. The temperature dependent structural formation of nitride nanostructures have been systematically investigated using X-ray diffraction. Raman spectra of the samples grown at optimized condition exhibited different phonon modes of the respective nitrides (GaN, InN and InxGa1?xN). Nanoparticles and nanorods formation of the indium nitride and indium gallium nitride are observed in the TEM micrographs. FFT analysis revealed that the synthesized III-nitride nanostructures are of good crystalline quality. Nanorods of these nitrides showed better crystalline quality than the nanoparticles in the FFT reflections.
Keywords:III-Nitrides  Hydrothermal method  X-ray diffraction (XRD)  High resolution transmission electron microscopy (HR-TEM)
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