Enhancing photocatalytic activity of ZnO nanowires by embedding ITO layer as a photogenerated electron collecting layer |
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| Affiliation: | 1. Department of Physics, Southeast University, Nanjing 211189, China;2. Key Laboratory of MEMS of the Ministry Education, Southeast University, Nanjing 210096, China;3. Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, China;4. School of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;5. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, China;6. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China;1. Chemistry Department, University of Dar es Salaam, P.O. Box 35061, Dar es Salaam, Tanzania;2. Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, South Africa;1. CSIR – Central Glass & Ceramic Research Institute, 196, Raja S C Mullick Road, Kolkata 700032, West Bengal, India;2. Department of Instrumentation Science, Jadavpur University, Kolkata 700032, West Bengal, India;1. Department of Physics, Faculty of Art and Science, Harran University, 63300 Sanliurfa, Turkey;2. Central Laboratory, Harran University, 63300 Sanliurfa, Turkey;1. Department of Physics, Hazara University Mansehra, KPK 25000, Pakistan;2. University of West Bohemia, Univerzitni 8, 306 14 Pilsen, Czech Republic;3. Department of Physics, Islamia College University, Peshawar 25000, Pakistan;4. College of Engineering, Chemical Engineering Department, King Saud University Riyadh, Saudi Arabia;5. LPQ3M Laboratory, Faculty of Science and Technology, University of Mascara, Algeria;6. Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia;7. Department of Physics, University of Agriculture, Faisalabad 38040, Pakistan;1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;2. Engineering Research Center on Solid-State Lighting and its Informationisation of Guangdong Province, South China University of Technology, Wushan Road, Guangzhou 510640, China;3. Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China;1. Physics Department, Faculty of Science- Al Faisaliah Campus, King Abdulaziz University, Jeddah, Saudi Arabia;2. Groups of Physics at AAUJ and at Faculty of Engineering, Atilim University, 06836 Ankara, Turkey |
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| Abstract: | The photocatalytic performance of a semiconductor is strongly limited by the inefficient separation of photogenerated carries. In this work, an indium tin oxide (ITO) layer was introduced before the conventional growth of vertically aligned ZnO nanowires by chemical vapor deposition using Al-doped ZnO (AZO) as a seed layer on glass substrates. The ITO layer behaving as an efficient collecting layer of photogenerated electrons strongly suppressed the recombination of photogenerated electrons and holes, which was confirmed by the photoluminescence spectra. The UV-induced photocatalytic activities in aqueous solution were evaluated by selecting rhodamine B as the model contaminant. The ZnO nanowires with ITO layer exhibited notably enhanced photocatalytic activity, which was 9.65 times faster than that of ZnO nanowires alone. It has been proposed that the organic molecules were mainly oxidized by holes concentrated in the valence band of ZnO due to the efficient collection of electrons by ITO layer. Our work highlights that addition of electron collecting layer provides an efficient method to enhance the activity of semiconductor photocatalysts. |
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| Keywords: | ZnO nanowires ITO Heterostructure Photocatalysis |
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