Epitaxial growth of nonpolar GaN films on r-plane sapphire substrates by pulsed laser deposition |
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| Affiliation: | 1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;2. Engineering Research Center on Solid-State Lighting and its Informationisation of Guangdong Province, South China University of Technology, Wushan Road, Guangzhou 510640, China;3. Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China;1. Department of Physics, Faculty of Art and Science, Harran University, 63300 Sanliurfa, Turkey;2. Central Laboratory, Harran University, 63300 Sanliurfa, Turkey;1. Department of Environmental Science and Engineering, Heilongjiang University, Xuefu Road 74, Nangang District, Harbin 150080, Heilongjiang Province, PR China;2. Key Laboratory of Chemical Engineering Process & Technology for High-efficiency Conversion, Harbin, College of Heilongjiang Province, PR China;1. Université F. Rabelais, Laboratoire de Physico-Chimie des Matériaux et des Electrolytes pour l’Energie (PCM2E), EA 6299, Parc de Grandmont, 37200 Tours, France;2. Unité de recherche de physique quantique, Faculté des Sciences de Monastir, Tunisia;3. Institut XLIM UMR 7252, Université de Limoges/CNRS, 123 av. A. Thomas, 87060 Limoges, France;1. Department of Engineering Physics, Bengal College of Engineering & Technology, Durgapur, India;2. Department of Physics, National Institute of Technology, Durgapur, India;3. Centre for Advanced Materials Processing, CSIR-Central Mechanical Engineering Research Institute, Durgapur, India;1. Department of Physics, Hazara University Mansehra, KPK 25000, Pakistan;2. University of West Bohemia, Univerzitni 8, 306 14 Pilsen, Czech Republic;3. Department of Physics, Islamia College University, Peshawar 25000, Pakistan;4. College of Engineering, Chemical Engineering Department, King Saud University Riyadh, Saudi Arabia;5. LPQ3M Laboratory, Faculty of Science and Technology, University of Mascara, Algeria;6. Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia;7. Department of Physics, University of Agriculture, Faisalabad 38040, Pakistan;1. Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja-shi, Okayama 719-1197, Japan;2. Technology, GlobalWafers Japan Co., Ltd., 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan;3. Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, Ghent B-9000, Belgium |
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| Abstract: | Single-crystalline nonpolar GaN epitaxial films have been successfully grown on r-plane sapphire (Al2O3) substrates by pulsed laser deposition (PLD) with an in-plane epitaxial relationship of GaN[1-100]//Al2O3[11-20]. The properties of the ~500 nm-thick nonpolar GaN epitaxial films grown at temperatures ranging from 450 to 880 °C are studied in detail. It is revealed that the surface morphology, the crystalline quality, and the interfacial property of as-grown ~500 nm-thick nonpolar GaN epitaxial films are firstly improved and then decreased with the growth temperature changing from 450 to 880 °C. It shows an optimized result at the growth temperature of 850 °C, and the ~500 nm-thick nonpolar GaN epitaxial films grown at 850 °C show very smooth surface with a root-mean-square surface roughness of 5.5 nm and the best crystalline quality with the full-width at half-maximum values of X-ray rocking curves for GaN(11-20) and GaN(10-11) of 0.8° and 0.9°, respectively. Additionally, there is a 1.7 nm-thick interfacial layer existing between GaN epitaxial films and r-plane sapphire substrates. This work offers an effective approach for achieving single-crystalline nonpolar GaN epitaxial films for the fabrication of nonpolar GaN-based devices. |
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| Keywords: | Nonpolar GaN films Pulsed laser deposition Interfacial layer |
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