Effect of film thickness on the surface,structural and electrical properties of InAlN films prepared by reactive co-sputtering |
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| Affiliation: | 1. School of Physics, Universiti Sains Malaysia (USM), 11800 Pulau Pinang, Malaysia;2. Institute of Nano Optoelectronics Research and Technology, Universiti Sains Malaysia (USM), 11800 Pulau Pinang, Malaysia;1. Chemistry Department, University of Dar es Salaam, P.O. Box 35061, Dar es Salaam, Tanzania;2. Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, South Africa;1. College of Chemistry and Chemical Engineering, Mianyang Normal University, Mianyang 621000, PR China;2. Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, PR China;1. CSIR – Central Glass & Ceramic Research Institute, 196, Raja S C Mullick Road, Kolkata 700032, West Bengal, India;2. Department of Instrumentation Science, Jadavpur University, Kolkata 700032, West Bengal, India;1. Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja-shi, Okayama 719-1197, Japan;2. Technology, GlobalWafers Japan Co., Ltd., 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan;3. Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, Ghent B-9000, Belgium;1. Department of Physics, Southeast University, Nanjing 211189, China;2. Key Laboratory of MEMS of the Ministry Education, Southeast University, Nanjing 210096, China;3. Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, China;4. School of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;5. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, China;6. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China;1. Physics Department, Faculty of Science- Al Faisaliah Campus, King Abdulaziz University, Jeddah, Saudi Arabia;2. Groups of Physics at AAUJ and at Faculty of Engineering, Atilim University, 06836 Ankara, Turkey |
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| Abstract: | InAlN films of different thicknesses (150 nm, 250 nm, 380 nm, 750 nm and 1050 nm) were grown on Si (111) by means of reactive co-sputtering at 300 °C. Surface morphology results indicated an increase in the grains size and their spacing with increase of the film thickness. The surface of InAlN remained smooth with a slight variation in its RMS roughness from 1.29 nm to 6.62 nm by varying the film thickness. X-ray diffraction patterns exhibited InAlN diffraction peaks with preferred orientation along (002) plane in the thickness range 250 nm to 750 nm, however, the preferred orientation of the film was changed towards (101) plane at 1050 nm. An improvement in the crystallinity of InAlN was observed with increase of the film thickness. Electrical characterization revealed a decrease in the film's resistivity by increasing its thickness to 750 nm, however, the resistivity was found to increase at 1050 nm. The electron concentration indicated an increasing trend whereas changes in the electron mobility were found to be inconsistent with increase of the film thickness. |
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| Keywords: | III-nitride InAlN Thickness variations Nanomaterial Surface Resistivity |
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