Multilevel characteristics for bipolar resistive random access memory based on hafnium doped SiO2 switching layer |
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| Affiliation: | 1. Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei key laboratory of ferroelectric and dielectric materials and devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China;2. Department of Electrical Engineering, City University of Hong Kong, Hong Kong Special Administrative Region;1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;2. Engineering Research Center on Solid-State Lighting and its Informationisation of Guangdong Province, South China University of Technology, Wushan Road, Guangzhou 510640, China;3. Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China;1. Physics Department, Faculty of Science- Al Faisaliah Campus, King Abdulaziz University, Jeddah, Saudi Arabia;2. Groups of Physics at AAUJ and at Faculty of Engineering, Atilim University, 06836 Ankara, Turkey;1. Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja-shi, Okayama 719-1197, Japan;2. Technology, GlobalWafers Japan Co., Ltd., 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan;3. Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, Ghent B-9000, Belgium;1. College of Life Science and Technology, Hebei Normal University of Science & Technology, Qinhuangdao 066600, PR China;2. Beijing University of Chinese Medicine Dongfang College, Langfang 065001, PR China;3. College of Chemical Technology, Shijiazhuang University, Shijianzhuang 050035, PR China;1. Network of Institutes for Solar Energy (CSIR-NISE), Physics of Energy Harvesting Division, CSIR–National Physical Laboratory, India;2. Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, New Delhi, Dr. K.S. Krishnan Marg, New Delhi 110012, India |
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| Abstract: | We fabricated TiN/Hf:SiO2/Pt memory cell with the small size of 1×1 um2 by lithography and sputtering technology, which demonstrated excellent bipolar resistive switching (RS) characteristics. The device presents good endurance and outstanding uniformity. The coefficient of variation of Vset, Vreset, Ron and Roff were found to be 5.05%, 4.78%, 4.18%, and 15.78%, respectively. For the device with hafnium doped SiO2 switching layer, multilevel storage capability can be successfully obtained by varying either the stop voltage or the compliance current in the SET process. In addition, the impact of forming current on the RS properties was studied. We found that the ratio of On/Off current for the device increased with the decrease of the forming current, which would be beneficial for the design of low power device. Possible RS mechanisms aiming to explain the impact of forming current on the RS characteristics and multilevel storage were also deduced. |
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| Keywords: | RRAM Multilevel Forming Bipolar Hafnium dopant |
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