Defect modification in ZnInSnO transistor with solution-processed Al2O3 dielectric by annealing |
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| Affiliation: | 1. Department of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-Do 440-746, Republic of Korea;2. Department of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi-Do 440-746, Republic of Korea;3. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-Do 440-746, Republic of Korea;1. School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601, China;2. Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061, China;3. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China;1. College of Physics and Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;2. Electronic Ceramics Center, DongEui University, Busan 614-714, Republic of Korea;1. College of Physics Science, Qingdao University, Qingdao 266071, China;2. Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;3. Electronic Ceramics Center, DongEui University, Busan 614-714, Republic of Korea;4. College of Chemical Science and Engineering, Qingdao University, Qingdao 266071, China |
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| Abstract: | The properties of solution-processed Al2O3 thin films annealed at different temperatures were thoroughly studied through thermogravimetry–differential thermal analysis, UV–vis-NIR spectrophotometer measurements, scanning electron microscopy, X-ray diffraction, atomic force microscopy and a series of electrical measurements. The solution-processed ZnInSnO thin films transistors (TFTs) with the prepared Al2O3 dielectric were annealed at different temperatures. The TFTs annealed at 600 °C have displayed excellent electrical performance such as the field-effect mobility of 116.9 cm2 V?1 s?1 and a subthreshold slope of 93.3 mV/dec. The performance of TFT device could be controlled by adjusting the annealing temperature. The results of two-dimensional device simulations demonstrate that the improvement of device performance are closely related with the reduction of interface defects between channel and dielectric and subgap density of stats (DOS) in the channel layer. |
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| Keywords: | Annealing Interface Density of states Two-dimensional numerical simulation |
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