Model based precise analysis of the injection currents in Al/ZrO2/Al2O3/ZrO2/SiO2/Si structures for use in charge trapping non-volatile memory devices |
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| Affiliation: | 1. Institute of Physics, Faculty of Natural Science and Mathematics, Ss. Cyril and Methodius University, Arhimedova 3, 1000 Skopje, Macedonia;2. Research Center for Environment and Materials, Macedonian Academy of Sciences and Arts, Skopje, Macedonia;3. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee blvd., 1784 Sofia, Bulgaria;1. Soft x-ray Application Lab, Raja Ramanna Centre for Advanced Technology, Indore 452 013 India;2. Homi Bhabha National Institute, Bhabha Atomic Research Centre, Anushakti Nagar, Mumbai 400094, India;1. Dipartimento di Fisica e Astronomia, Università di Padova, and INFN, Sez. di Padova, I-35131 Padova, Italy;2. INFN, Laboratori Nazionali di Legnaro, I-35020 Legnaro (Padova), Italy;3. Physics Division, Argonne National Laboratory, Argonne, IL 60439, USA;4. IPHC, CNRS-IN2P3, Université de Strasbourg, F-67037 Strasbourg Cedex 2, France;5. Institute of Nuclear Physics, Polish Academy of Sciences, PL 31-342 Cracow, Poland;6. Ru?er Bo?kovi? Institute, HR-10002 Zagreb, Croatia |
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| Abstract: | Metal/insulator/Silicon (MIS) capacitors containing multilayered ZrO2/Al2O3/ZrO2/SiO2 dielectric were investigated in order to evaluate the possibility of their application in charge trapping non-volatile memory devices. The ZrO2/Al2O3/ZrO2 stacks were deposited by reactive rf magnetron sputtering on 2.4 nm thick SiO2 thermally grown on p-type Si substrate. C–V characteristics at room temperature and I–V characteristics recorded at temperatures ranging from 297 K to 393 K were analyzed by a comprehensive model previously developed. It has been found that Poole-Frenkel conduction in ZrO2 layers occurs via traps energetically located at 0.86 eV and 1.39 eV below the bottom of the conduction band. These levels are identified as the first two oxygen vacancies related levels in ZrO2, closest to its conduction band edge, whose theoretical values reported in literature are: 0.80 eV, for fourfold, and 1.23 eV, for threefold coordinated oxygen vacancies. |
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| Keywords: | Zirconium oxide Charge trapping Charge trapping memory Conduction mechanisms in solids |
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