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Effect of the deposition rate on the phase transition in silver telluride thin films
Affiliation:1. Department of Physics, NMSSVN College, Madurai, Tamilnadu 625019, India;2. School of Physics, Madurai Kamaraj University, Madurai 625021, India;3. School of energy Sciences, Madurai Kamaraj University, Madurai 625021, India;1. Department of Chemical and Environmental Engineering and Winston Chung Global Energy Center, University of California-Riverside, Riverside, 92521 California, United States;2. North High School, Riverside, 92508 California, United States;3. Electrochemistry Department, Korea Institute of Materials Science, Changwon 641-831, Korea;4. Gyongwon Middle School, Seoul 137-030, South Korea;5. Department of Fusion Chemical Engineering, Hanyang University, Ansan 426-791, South Korea;6. Korea Institute for Rare Metals, Korea Institute of Industrial Technology, Incheon 406-840, South Korea;1. Department of Materials Science, Tohoku University, 6-6-11 Aoba-yama, Aoba-ku, Sendai 980-8579, Japan;2. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan;3. Department of Electronic Engineering, Hanyang University, Seoul 133-791, Republic of Korea;1. Department of Electrical Engineering, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand, India;2. Botany Division, Forest Research Institute, Dehradun, Uttarakhand, India
Abstract:Silver telluride thin films of thickness 50 nm have been deposited at different deposition rates on glass substrates at room temperature and at a pressure of 2×10?5 mbar. The electrical resistivity was measured in the temperature range 300–430 K. The temperature dependence of the electrical resistance of Ag2Te thin films shows structural phase transition and coexistence of low temperature monoclinic phase and high temperature cubic phase. The effect of deposition rate on the phase transition and the electrical resistivity of silver telluride thin films in relation to carrier concentration and mobility are discussed.
Keywords:Silver telluride  Deposition rate  Electrical resistivity  Phase transition
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