Effects of RTA temperatures on conductivity and micro-structures of boron-doped silicon nanocrystals in Si-rich oxide thin films |
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| Affiliation: | 1. Department of Chemical and Materials Engineering, Hefei College, Hefei City 230601, PR China;2. School of Chemistry and Biological Engineering, Hezhou University, Hezhou 542899, PR China;3. Key Laboratory of Materials for Energy Conversion, Chinese Academy of Sciences, Hefei City 230601, PR China;4. Hefei Lucky & Technology Industry Co. Ltd., Hefei City 230041, PR China;1. Instituto Politécnico Nacional, México D.F., Mexico;2. CIICAp-Universidad Autónoma del Estado de Morelos, Cuernavaca, Mexico;1. Physics Department, Korea University, Seoul 136-713, South Korea;2. Physics Department, University of Notre Dame, Notre Dame, IN 46556, USA;1. Laboratoire de Physique des Matériaux, Faculté de physique, Université des Sciences et de la Technologie Houari Boumediene (USTHB), B.P. 32, El Alia, Bab Ezzouar DZ-16111Alger, Algeria;2. Department of Physics, Izmir Institute of Technology, TR-35430 Izmir, Turkey;3. Laboratoire des Matériaux, Technologie des systèmes énergétiques et environnement, Faculté des sciences et de technologie, Université de Ghardaia Noumirat BP 455, route de Ouargla, 47000 Ghardaia, Algeria;1. Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea;2. BIO-IT Micro Fab Center, Yonsei University, Seoul 03722, Republic of Korea;1. School of Integrated Technology, Yonsei University, 161-1, Songdo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea;2. Yonsei Institute of Convergence Technology, Yonsei University, 162-1, Songo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea |
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| Abstract: | In this work, the B-doped Si rich oxide (SRO) thin films were deposited and then annealed using rapid thermal annealing (RTA) to form SiO2-matrix silicon nanocrystals (Si NCs). The effects of the RTA temperatures on the structural properties, conduction mechanisms and electrical properties of B-doped SRO thin films (BSF) were investigated systematically using Hall measurements, Fourier transform infrared spectroscopy and Raman spectroscopy. Results showed that the crystalline fraction of annealed BSF increased from 41.3% to 62.8%, the conductivity was increased from 4.48×10?3 S/cm to 0.16 s/cm, the carrier concentration was increased from 8.74×1017 cm?3 to 4.9×1018 cm?3 and the carrier mobility was increased from 0.032 cm2 V?1 s?1 to 0.2 cm2 V?1 s?1 when the RTA temperatures increased from 1050 °C to 1150 °C. In addition, the fluctuation induced tunneling (FIT) theory was applicable to the conduction mechanisms of SiO2-matrix boron-doped Si-NC thin films. |
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| Keywords: | Si nanocrystal Rapid thermal annealing Annealing temperature Electrical property |
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