Fabrication of Microstructured thermoelectric Bi2Te3 thin films by seed layer assisted electrodeposition

In this work, bismuth telluride (Bi₂Te₃) thin films have been fabricated on Bi₂Te₃/ITO substrates by constant potential electrochemical deposition at room temperature. Bi₂Te₃ seed layers with different thicknesses (2 nm, 4 nm and 6 nm) were deposited onto ITO substrates using molecular beam epitaxy (MBE) method. The SEM images show that the morphology of Bi₂Te₃ thin films can be controlled not only by the deposition potential, but also the thickness of seed layer. Moreover, the morphologies of Bi₂Te₃ thin films with different thickness of seed layers tend to be similar and contain two-layer structure along the vertical direction after prolonged deposition time. Due to the two layers structure, Bi₂Te₃ thin films have shown different electrical conductivity performances. At room temperature, Bi₂Te₃ thin films with 4 nm-thick seed layer possess the maximum electrical conductivity value of 617.9 s cm^-1.