Ge-rich SiGe thin film deposition by co-sputtering in in-situ and ex-situ solid phase crystallization for photovoltaic applications |
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| Affiliation: | 1. Solar Energy Research Institute, The National University of Malaysia, Bangi, Selangor, 43600 Malaysia;2. Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering and Built Environment, The National University of Malaysia, Bangi, Selangor, 43600 Malaysia;3. Department of Electrical Engineering, College of Engineering, King Saud University, Riyadh, 11421 Saudi Arabia;1. Co-innovation Center for Green Building, Shandong Jianzhu University, Jinan 250101, China;2. School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China;3. Shandong Linuo Solar Power Holdings Co., Ltd, Jinan, Shandong 250103, China;4. Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY 40506, USA;1. Department of Physics, Faculty of Science, King Mongkut''s Institute of Technology Ladkrabang, Bangkok 10520, Thailand;2. College of Advanced Manufacturing Innovation, King Mongkut''s Institute of Technology Ladkrabang, Bangkok 10520, Thailand;1. Nanomaterials and Devices Research Laboratory, School of Nano Science and Technology, NIT-Calicut, India;2. Department of Bioscience and Biotechnology, Banasthali University, Banasthali, Rajasthan, India;3. Sensors and Nanotechnology Group, CSIR-Central Electronics Engineering Research Institute, Pilani, India |
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| Abstract: | This study investigates the properties of high Ge content silicon-germanium thin films in the non-hydrogenated state (Ge-rich SiGe) deposited on glass by RF magnetron co-sputtering in both in-situ and ex-situ solid phase crystallization (SPC) at various temperatures, such as RT to 550 °C. The structural and optical characteristics of SiGe films have been explored systematically by optimizing growth temperature. Atomic composition of films was determined by EDX, which showed up to 77 at% of Ge. Structural properties were characterized by XRD, which revealed all samples to be in amorphous nature. The results from Raman and UV–VIS–IR transmittance measurements showed that the properties of amorphous Si0.23Ge0.77 films improved at 450 °C in both in-situ and ex-situ SPC processes. In addition, EDX exposed an advantage of in-situ process over ex-situ due to the incorporation of oxygen during ex-situ thermal annealing. Possible deposition at low substrate temperature as found here suggests that these Si0.23Ge0.77 films have a substantial potential to be used in thin film Si-based solar cells. |
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| Keywords: | SiGe thin films Co-sputtering Annealing Properties of SiGe |
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