Structural and electrical characterization of CoNiO monolayer as copper diffusion barrier in integrated circuits |
| |
| Affiliation: | 1. Electronic Science Department, Kurukshetra University Kurukshetra, India;2. Department of Electrical Engineering, College of Engineering, Prince Sattam Bin Abdulaziz University, Wadi Aldawasir, Saudi Arab;3. U.I.E.T., Kurukshetra University Kurukshetra, India;4. YMCA University of Science & Technology, Faridabad, India;1. Department of Technology, XFAB Sarawak Sdn Bhd, 1 Silicon Drive, Sama Jaya Free Industrial Zone, 93250 Kuching, Sarawak, Malaysia;2. Engineering Department, University of Cambridge, Cambridge CB2 1PZ, United Kingdom;3. Department of Electronics Engineering, Faculty of Engineering, University of Sarawak, Malaysia, 93400 Kota Samarahan, Sarawak, Malaysia;1. School of Mechanical Engineering and Automation, Northeastern University, Shenyang, 110819, PR China;2. School of Mechanical Engineering, Inner Mongolia University of Science & Technology, Baotou 014010, PR China;1. Department of Chemical Engineering, Lee Kong Chian Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Jalan Sungai Long, Bandar Sungai Long, Cheras, 43000 Kajang, Selangor, Malaysia;2. Radiation Processing Technology Division, Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor, Malaysia;3. Department of Polymer Engineering, Faculty of Chemical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor, Malaysia;1. New York University, New York, NY, United States;2. IBM T.J. Watson Research Center, Yorktown Heights, NY, United States;3. Cypress Semiconductor, San Jose, CA, United States;4. IBM Research, Albany, NY, United States;1. Institute for Electronic Design Automation, Technische Universität München, Munich, Germany;2. Institute of Microelectronic Systems, Leibniz Universität Hannover, Hannover, Germany;1. Laboratory of Storage and Valorization of Renewable Energies, Faculty of Chemistry, U.S.T.H.B., BP 32, 16111 El-Alia, Algiers, Algeria;2. National Veterinary High School, BP 161-El Harrach, Algiers, Algeria;3. Intel Corporation, 2000 Mission College Boulevard, Santa Clara, CA 95054, USA |
| |
| Abstract: | Diffusion barrier properties of CoNiO monolayer, deposited by Langmuir Blodgett (LB) technique, were studied against the diffusion of copper through SiO2. Cu/CoNiO/SiO2/Si and Cu/SiO2/Si test structures were prepared and compared for this purpose. These test structures were annealed at temperatures starting from 100 °C up to 650 °C in vacuum. Samples were characterized using Energy Dispersive X-ray Spectroscopy (EDS), Atomic force microscopy (AFM), X-ray diffraction (XRD), scanning electron microscope (SEM), four probe resistivity measurement, Capacitance-Voltage (C?V), Current-Voltage (I?V) characterization techniques. EDS and AFM confirmed the composition and structure of the deposited monolayer. Thermal stability was studied using X-ray diffraction (XRD), Scanning Electron Microscope (SEM) and four probe techniques. Results indicated that structure with barrier was stable up to 600 °C whereas its counterpart could sustain only up to 300 °C. Sheet resistance of Cu/SiO2/Si structure starts increasing at 300 °C and that of Cu/CoNiO/SiO2/Si test structure was almost unchanged up to 600 °C in. SEM analysis of samples annealed at different temperatures also confirmed the XRD and four probe results. Biased Thermal Stress (BTS) was applied to the samples and its effect was observed using C?V analysis. C?V curves showed that in the presence of CoNiO barrier layer there was no shift in the C?V curve even after 120 min of BTS while in the absence of barrier there was a significant shift in the C?V curve even after 30 min of BTS. Leakage current density (jL) was plotted against the BTS duration under same BTS conditions. It was found that the Cu/CoNiO/SiO2/Si stack could survive about two times more than the Cu/SiO2/Si stack. |
| |
| Keywords: | Langmuir Blodgett technique Monolayer diffusion barrier Biased thermal stress XRD C?V and leakage current characterization |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
