A study on phase transformation of SnOx thin films prepared by reactive magnetron sputtering |
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| Affiliation: | 1. Centre de Développement des Energies Renouvelables, CDER, 16340 Algiers, Algeria;2. Conditions Extrêmes et Matériaux: Haute Température et Irradiation (CEMHTI), CNRS UPR 3079, 3A Rue de la Férollerie, 45071 Orléans Cedex 2, France;3. Centre de Recherche sur la Matière Divisée (CRMD), 1B rue de la Férollerie, 45071 Orléans Cedex 2, France;4. Aix-Marseille Université, CNRS, IM2NP, UMR 7334, 13397 Marseille, France;5. Ion Beam Services (IBS), Rue G. Imbert Prolongée, F-13790 Peynier, France;6. Pennsylvania State University, 212 Earth and Engineering Science Building, University Park, PA 16802, USA;1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, People''s Republic of China;2. Norman Bethune University of Medical Sciences, Jilin University, 71 Xinmin Street Changchun, 130012, People''s Republic of China;3. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023, People''s Republic of China |
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| Abstract: | In the paper, SnOx thin films were deposited by reactive magnetron sputtering from a tin target in O2 containing working gas. The evolution from Sn-containing SnO to tetravalent SnO2 films was investigated. The films could be classified into three groups according to their optical band gaps, which are Eg<2.5 eV, Eg=3.0–3.3 eV and Eg>3.7 eV. The electric measurements show that high conductivity can be obtained much easier in SnO2 than in SnO films. A high electron mobility of 15.7 cm2 V−1 s−1, a carrier concentration of 1.43×1020 cm−3 and a resistivity of 2.8×10−3 Ω cm have been achieved in amorphous SnO2 films. Films with the optical band gap of 3.0–3.3 eV remain amorphous though the substrate temperature is as high as 300 °C, which implies that °btaining high mobility in p-type SnO is more challenging in contrast to n-type SnO2 films. |
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| Keywords: | P-type SnO Thin film transistor |
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