| 大面积非光刻纳米电极间隙的制备 |
| |
| 引用本文： | 李艳,王晓峰,张加勇,王晓东,樊中朝,杨富华.大面积非光刻纳米电极间隙的制备[J].半导体学报,2009,30(9):096003-4. |
| |
| 作者姓名： | 李艳 王晓峰 张加勇 王晓东 樊中朝 杨富华 |
| |
| 基金项目： | 国家高技术研究发展计划 |
| |
| 摘 要： | A lithography-independent and wafer scale method to fabricate a metal nanogap structure is demonstrated. Polysilicon was first dry etched using photoresist （PR） as the etch mask patterned by photolithography. Then, by depositing conformal SiO2 on the polysilicon pattern, etching back SiO2 anisotropically in the perpendicular direction and removing the polysilicon with KOH, a sacrificial SiO2 spacer was obtained. Finally, after metal evaporation and lifting-off of the SiO2 spacer, an 82 nm metal-gap structure was achieved. The size of the nanogap is not determined by the photolithography, but by the thickness of the SiO2. The method reported in this paper is compatible with modern semiconductor technology and can be used in mass production.
|
| 关 键 词： | 金属加工 光刻胶 独立和 电极 二氧化硅 各向异性刻蚀 SiO2 间隙结构 |
| 收稿时间： | 4/3/2009 8:58:29 AM |
| 修稿时间： | 5/5/2009 8:23:00 AM |
Lithography-independent and large scale fabrication of a metal electrode nanogap |
| |
| Li Yan,Wang Xiaofeng,Zhang Jiayong,Wang Xiaodong,Fan Zhongchao and Yang Fuhua.Lithography-independent and large scale fabrication of a metal electrode nanogap[J].Chinese Journal of Semiconductors,2009,30(9):096003-4. |
| |
| Authors: | Li Yan Wang Xiaofeng Zhang Jiayong Wang Xiaodong Fan Zhongchao and Yang Fuhua |
| |
| Affiliation: | Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| |
| Abstract: | A lithography-independent and wafer scale method to fabricate a metal nanogap structure is demonstrated. Polysilicon was first dry etched using photoresist (PR) as the etch mask patterned by photolithography. Then, by depositing conformal SiO2 on the polysilicon pattern, etching back SiO2 anisotropically in the perpendicular direction and removing the polysilicon with KOH, a sacrificial SiO2 spacer was obtained. Finally, after metal evaporation and lifting-off of the SiO2 spacer, an 82 nm metal-gap structure was achieved. The size of the nanogap is not determined by the photolithography, but by the thickness of the SiO2. The method reported in this paper is compatible with modern semiconductor technology and can be used in mass production. |
| |
| Keywords: | lithography-independent nanogap conformal deposition anisotropic etching |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
