Growth of High-Quality AlxGa1−xAs By OMVPE for laser devices

Optimum conditions are reported for the growth of high-quality Al_xGa_{1_x}As by means of vapor phase epitaxy from organometallic compounds (OMVPE). Typical values of mobili-ty and radiative recombination efficiency are reported, showing that OMVPE material quality is the same as that grown by liquid phase epitaxy (LPE). OMVPE-grown DH narrow-stripe lasers with Al_.06Ga_.94As active layers show minimum threshold currents of85 mÅ, comparable to the best lasers with similar structures produced by LPE.