Rectifying properties of poly(N-methylaniline)

The electrical properties of various metal (Al/In/Sb/Sn)/poly(N-methylaniline)/gold Schottky diodes are described. The temperature-dependent dark current (J)–voltage (V ) characteristics indicate that the junctions formed with Al/In possess better rectifying properties with Schottky emission. In the case of junctions formed with Sb/Sn, Poole–Frenkel emission appears to be the dominant mechanism. The junction parameters of ideality factor, reverse saturation current, and barrier potential have been evaluated and compared with the reported values for Schottky barriers based on polyaniline and a few of its substituted derivatives. The capacitance (C)–voltage (V ) data obtained at different frequencies have been used to evaluate the carrier concentration, mobility, depletion width, contact potential, and work function of the polymer.