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IGBT串联均压方法综述
引用本文:张雪珺,黄萌,刘佳鸿,梁琳,查晓明. IGBT串联均压方法综述[J]. 电源学报, 2021, 19(1): 192-204
作者姓名:张雪珺  黄萌  刘佳鸿  梁琳  查晓明
作者单位:武汉大学,武汉大学,武汉大学,华中科技大学,武汉大学
摘    要:绝缘栅双极性晶体管IGBT(insulated gate bipolar transistor)在高电压场合应用时需串联使用满足电压需求。由于器件内部的性能差异和外围电路参数不一致等,引起IGBT模块之间电压不均衡问题,威胁其运行安全。综述了国内外IGBT串联均压方法的发展及其研究现状。根据均压方法机理的不同,将IGBT串联均压方法分为被动均压方法和主动均压方法两种,进一步将主动均压方法归纳为无源控制方法和有源控制方法两类。根据各类方法的基本电路拓扑分析了均压原理,梳理了不同方法在电路拓扑、参数选择和控制策略等方面的优化和最新进展。通过均压效果、附加损耗和可靠性等多方面对不同均压方法进行对比,被动均压方法拓扑简单不需外加控制电路更适合在低频应用场合,在高频应用场合中,准有源栅极控制法以单驱动与无源器件相结合的方式,具有良好的发展前景。最后对IGBT串联均压方法进行了展望。

关 键 词:绝缘栅双极晶体管  串联  均压控制  电压不平衡
收稿时间:2019-12-09
修稿时间:2020-09-07

Review of Voltage Balancing Methods for Series-connected IGBTs
ZHANG Xuejun,HUANG Meng,LIU Jiahong,LIANG Lin and ZHA Xiaoming. Review of Voltage Balancing Methods for Series-connected IGBTs[J]. Journal of Power Supply, 2021, 19(1): 192-204
Authors:ZHANG Xuejun  HUANG Meng  LIU Jiahong  LIANG Lin  ZHA Xiaoming
Affiliation:Wuhan University,Wuhan University,,,
Abstract:When the high-voltage insulated gate bipolar transistors (IGBTs) are connected in series, due to the difference in performance inside the device and the inconsistent peripheral circuit parameters, the voltage imbalance between the IGBT modules will be caused. Domestic and foreign scholars have proposed many different voltage balancing methods to solve the problem. The development of IGBT series voltage balancing methods at home and abroad and the research status of various methods are reviewed. According to the different voltage balancing control mechanism, the IGBT voltage balancing methods are mainly divided into active voltage balancing control methods and passive voltage balancing control methods. According to the basic circuit topology of various methods, the principle of voltage equalization is analyzed, and the optimization and latest progress of different methods in circuit topology, parameter selection, control strategy, etc. are combed. By comparing different voltage equalization methods through the voltage equalization effect, additional losses, and reliability, the passive voltage equalization method has a simple topology and no additional control circuit is more suitable for low frequency applications. In high frequency applications, the quasi-active gate control method combines single drive with passive devices, which has a good development prospect. Finally, the IGBT series voltage equalization method is prospected.
Keywords:insulation gate bipolar transistor (IGBT)   series connected   voltage balancing control   unbalancing voltage
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