| MEVVA源离子注入在宝石着色中的应用 |
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| 引用本文： | 肖志松 徐飞 等. MEVVA源离子注入在宝石着色中的应用[J]. 宝石和宝石学杂志, 2000, 2(4): 42-46 |
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| 作者姓名： | 肖志松 徐飞 等 |
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| 作者单位： | [1]北京师范大学射线束技术与材料改性教育部重点实验室，北京100875 [2]南昌大学材料科学与工程系，江西南昌330047 |
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| 摘 要： | 利用金属蒸气真空弧（MEVVA）离子源将金属Fe,Co,Cr,Ti和Nd离子注入无色人工合成蓝宝石，在一定的注入条件下和退火过程中，获得了不同颜色的蓝宝石，利用RBS和XRD分析了掺杂层中的金属元素浓度分布和物相变化，对退火态样品的可见光吸收谱进行了分析，探讨了掺杂元素种类，浓度分布和物相变化对蓝宝石着色的影响。
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| 关 键 词： | 离子注入 MEVVA离子源 蓝宝石 着色 吸收光谱 人造宝石 |
APPLICATION OF ION IMPLANTATION TO SAPPHIRE COLOURATION BY MEVVA SOURCE |
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| Xiao Zhisong Xu Fei Xie Datao Cheng Guoan Zhang Tonghe .. APPLICATION OF ION IMPLANTATION TO SAPPHIRE COLOURATION BY MEVVA SOURCE[J]. Journal of Gems & Gemmology, 2000, 2(4): 42-46 |
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| Authors: | Xiao Zhisong Xu Fei Xie Datao Cheng Guoan Zhang Tonghe . |
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| Affiliation: | Xiao Zhisong 1 Xu Fei 2 Xie Datao 3 Cheng Guoan 2 Zhang Tonghe 1 1. |
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| Abstract: | Colourless synthetic sapphires are implanted with various metal ions (Fe, Co, Cr, Ti, Nd) by use of MEVVA ion source. Colouration of metal dopped sapphires is investigated by varying the conditions of ion implantation and thermal annealing. The phases of metal dopped layers in synthetic sapphires are determined by X ray diffractometer (XRD). Rutherford Backscattering Spectroscopy (RBS) has been used to analyze the distribution of metal dopped layers. The absorption of metal dopped sapphires in visible range is studied by means of UV VIS spectrometer. |
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| Keywords: | ion implantation MEVVA ion source sapphire colouration |
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