| InGaAs（P）分别限制应变单量子阱激光器的优化设计 |
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| 引用本文： | 彭宇恒,陈松岩,陈维友,赵铁民,刘式墉. InGaAs（P）分别限制应变单量子阱激光器的优化设计[J]. 中国激光, 1996, 23(1): 29-34 |
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| 作者姓名： | 彭宇恒 陈松岩 陈维友 赵铁民 刘式墉 |
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| 作者单位： | 吉林大学电子工程系，集成光电子学国家重点联合实验室吉林大学实验区 |
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| 摘 要： | 针对较常用的ＩｎＧａＡｓ（Ｐ）分别限制应变单量子阱激光器，给出了为得到最大净增益的优化设计参数。对于激射波长为１．５５μｍ的无应变激光器，最佳的光限制层波长为１．２４μｍ，厚度为１００ｎｍ。当阱材料引入压缩应变后．由于价带的有效状态密度减小，量子阱激光器的微分增益变大，阱深的增大对增大线性增益的效果更加明显．所以最佳光限制层的波长将变短，为１．２０μｍ
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| 关 键 词： | 量子阱，分别限制，光限制层，净增益 |
| 收稿时间： | 1995-02-27 |
Design of InGaAs (P) Scparate-confinement-heterostruc Strained Quantum-well Lasers |
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| Peng Yuheng,Chen Songyan,Chen Weiyou,Zhao Tiemin,Liu Shiyong. Design of InGaAs (P) Scparate-confinement-heterostruc Strained Quantum-well Lasers[J]. Chinese Journal of Lasers, 1996, 23(1): 29-34 |
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| Authors: | Peng Yuheng Chen Songyan Chen Weiyou Zhao Tiemin Liu Shiyong |
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| Abstract: | The structural design with the largest net galn is presenteti for commonly-used InGaAsP separate-confinement-heterostruc (SCH) strained quantum-well lasers.The best wavelength and width of SCH layer are 1.24 μm and 1 00 nm for 1.55 μm unstrained single quantum-sell lasers.When compressive strain is introduced into the active layer,the best wavelength of SCH layer will be shorter because of the strain-induced reduction of state density and the enhancement of differential gain in quantum-well lasers. |
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| Keywords: | quantum-well separate-confinement-heterostructure optical confinement layer net gain |
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