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Epitaxial growth of SrTiO3 films with different orientations on TiN buffered Si(001) by pulsed laser deposition |
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| Authors: | Wenbin Wu K. H. Wong C. L. Choy |
| Affiliation: | a Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hunghom, Kowloon, Hong Kong b Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, PR China |
| Abstract: | Epitaxial SrTiO3 (STO) films have been grown on TiN buffered Si(001) by pulsed laser deposition. The TiN layer was in situ deposited at 540, 640 or 720°C whereas the STO film was grown at a fixed temperature of 640°C. We have studied the effect of the growth temperature of TiN on the epitaxial relationship of STO/TiN heterostructures. It is found that for TiN grown at 540 or 640°C the epitaxial relationship is 001STO 001TiN, and for TiN grown at 720°C it changes to (101)STO (001)TiN and [01]STO [10]TiN (or [01]STO [110]TiN). This change of relationship is accompanied by a sharp reduction in the out-of-plane lattice constant of the TiN layer. Fourier transform infrared spectra show that the longitudinal optic modes are active for all the STO films, but the absorption peak associated with the transverse optic mode is observed only in the (101) oriented STO films. |
| Keywords: | Pulse laser deposition SrTiO3 Epitaxy Titanium nitride |
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