Structural and electrical properties of swift heavy ion beam irradiated Co/Si interface

Synthesis of swift heavy ion induced metal silicide is a new advancement in materials science research. We have investigated the mixing at Co/Si interface by swift heavy ion beam induced irradiation in the electronic stopping power regime. Irradiations were undertaken at room temperature using 120 MeV Au ions at the Co/Si interface for investigation of ion beam mixing at various doses: 8 × 10¹², 5 × 10¹³ and 1 × 10¹⁴ cm⁻². Formation of different phases of cobalt silicide is identified by the grazing incidence X-ray diffraction (GIXRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation.I–V characteristics at Co/Si interface were undertaken to understand the irradiation effect on conduction mechanism at the interface.