ZnGa2O4 thin films fabricated by Sol-gel spinning coating process

ZnGa₂O₄ thin film phosphors have been synthesized on ITO coated glass and soda-lime glass at a firing temperature of 500^∘C and an annealing temperature of 500^∘C and 600^∘C via a chemical solution method using Zinc acetate dihydrate, Gallium nitrate hydrate and 2-methoxiethanol as a solution. XRD patterns of the film phosphors synthesized showed the peaks of ZnGa₂O₄ crystalline phases. AFM surface morphologies of the ZnGa₂O₄ thin film phosphors revealed marked differences according to an annealing temperature of 500^∘C and 600^∘C under an annealing atmosphere (3% H₂/Ar). On the other hand, the sheet resistance of ZnGa₂O₄ thin film phosphors, which were measured by four-point probe instrument, was approximately 5.76 Ω /square and 7.86 Ω /square with annealing temperature, respectively. The ZnGa₂O₄ thin film phosphors exhibited blue emission spectra with peak wavelength of 434 nm and 436 nm by ultra-violet excitation around 230 nm.