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有耗串联网络对GaAs FET信号参数和噪声参数的影响
引用本文:任国屋. 有耗串联网络对GaAs FET信号参数和噪声参数的影响[J]. 固体电子学研究与进展, 1988, 0(2)
作者姓名:任国屋
作者单位:南京电子器件研究所
摘    要:本文详细讨论了有耗串联网络对低噪声GaAs FET的信号参数和噪声参数的影响,以及同时获得噪声匹配和功率匹配的条件。以WC606型GaAs FET为计算实例表明:在频率为12GHz,当串联电感为0.1nH,负载反射系数为0.25∠120°时,可以同时获得噪声和功率匹配。但此时最小噪声系数将增加0.2dB,而相应增益下降1.0dB。


The Effect of Lossy Series-Network on the Signal Parameters and Noise Figure of GaAs FETs
Abstract:The effect of lossy series-network on the signal and noise parameters of low noise GaAs FET's and the conditions for simultaneously achieving noise and power match are discussed in detail in this paper.The calculation of WC606 GaAs FET shows that the noise and power match can be simultaneously achieved when the series inductance equals 0.1nH and the reflection coefficient of the load is 0.25 ∠120° at 12GHz, but the minimum noise figure will increase fay 0.2dB, whereas the associated gain will decrease by 1dB.
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