Carbon-doped base GaAs-AlGaAs HBT's grown by MOMBE and MOCVDregrowth |
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Authors: | Hobson W.S. Ren F. Abernathy C.R. Pearton S.J. Fullowan T.R. Lothian J. Jordan A.S. Lunardi L.M. |
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Affiliation: | AT&T Bell Lab., Murray Hill, NJ; |
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Abstract: | High-quality GaAs-AlGaAs heterojunction bipolar transistors (HBTs) in which the carbon-doped base layers (p=1010-1020 cm-3, 400-800 Å thick) and Sn-doped collector and subcollector layers are grown by metalorganic molecular-beam epitaxy (MOMBE) and a subsequent regrowth using metalorganic chemical vapor deposition (MOCVD) is used to provide the n+ AlGaAs emitter and GaAs/InGaAs contact layers are discussed. A current gain of 20 was obtained for a base doping of 1019 cm-3 (800 Å thick) in a 90-μm-diameter device, with ideality factors of 1.0 and 1.4 for the base-collector and emitter-base junctions, respectively, demonstrating the excellent regrowth-interface quality. For a base doping of 1020 cm-3 (400 Å thick), the current gain decreased to 8 |
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