LWIR HgCdTe Detectors Grown on Ge Substrates |
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Authors: | MF Vilela DD Lofgreen EPG Smith MD Newton GM Venzor JM Peterson JJ Franklin M Reddy Y Thai EA Patten SM Johnson MZ Tidrow |
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Affiliation: | (1) Raytheon Vision System (RVS), 75 Coromar Dr., Goleta, CA 93117, USA;(2) Missile Defense Agency, Washington, DC, USA |
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Abstract: | Long-wavelength infrared (LWIR) HgCdTe p-on-n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100 mm Ge (112) substrates by
molecular beam epitaxy (MBE). The objective of this current work was to grow our baseline p-on-n DLHJ detector structure (used earlier on Si substrates) on 100 mm Ge substrates in the 10 μm to 11 μm LWIR spectral region, evaluate the material properties, and obtain some preliminary detector performance data. Material
characterization techniques included are X-ray rocking curves, etch pit density (EPD) measurements, compositional uniformity
determined from Fourier-transform infrared (FTIR) transmission, and doping concentrations determined from secondary-ion mass
spectroscopy (SIMS). Detector properties include resistance-area product (RoA), spectral response, and quantum efficiency.
Results of LWIR HgCdTe detectors and test structure arrays (TSA) fabricated on both Ge and silicon (Si) substrates are presented
and compared. Material properties demonstrated include X-ray full-width of half-maximum (FWHM) as low as 77 arcsec, typical
etch pit densities in mid 106 cm−2 and wavelength cutoff maximum/minimum variation <2% across the full wafer. Detector characteristics were found to be nearly
identical for HgCdTe grown on either Ge or Si substrates. |
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Keywords: | LWIR HgCdTe HgCdTe/Si HgCdTe/Ge molecular beam epitaxy coefficient of thermal expansion infrared photodiodes |
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