Rapid thermal annealing of ion implanted 6H-SiC by microwave processing |
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| Authors: | Jason A. Gardner Mulpuri V. Rao Y. L. Tian O. W. Holland E. G. Roth P. H. Chi I. Ahmad |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, George Mason University, 22030 Fairfax, VA;(2) Oak Ridge National Laboratory, 37831 Oak Ridge, TN;(3) National Institute of Standards and Technology, 20899 Gaithersburg, MD;(4) FM Technologies, 22032 Fairfax, VA |
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| Abstract: | Rapid thermal processing utilizing microwave energy has been used to anneal N, P, and Al ion-implanted 6H-SiC. The microwaves raise the temperature of the sample at a rate of 200°C/min vs 10°C/min for conventional ceramic furnace annealing. Samples were annealed in the temperature range of 1400-1700°C for 2-10 min. The implanted/annealed samples were characterized using van der Pauw Hall, Rutherford backscattering, and secondary ion mass spectrometry. For a given annealing temperature, the characteristics of the microwave-annealed material are similar to those of conventional furnace anneals despite the difference in cycle time. |
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| Keywords: | Implantation Microwave annealing Rapid thermal processing Silicon carbide |
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