| La3+、Cu2+、Fe3+/TiO2对金属-半导体表面肖特基势垒的影响 |
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| 引用本文： | 康华,李桂春,单志强.La3+、Cu2+、Fe3+/TiO2对金属-半导体表面肖特基势垒的影响[J].工业催化,2009,17(7):66-69. |
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| 作者姓名： | 康华 李桂春 单志强 |
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| 作者单位： | 黑龙江科技学院资源与环境工程学院， 黑龙江 哈尔滨 150027 |
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| 基金项目： | 黑龙江省教育厅科学技术研究项目 |
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| 摘 要： | 分析了金属-半导体表面的接触机理及肖特基势垒的形成，探讨了离子掺杂行为对势垒的影响机理，研究了光生载流子的迁移对TiO2半导体复合材料光催化活性的影响。结果表明,不同金属基体材料对表面势垒高度的影响程度不同，同掺杂离子的表面态对金属-半导体接触的影响也有差别,离子可以改变半导体功函数, La3+、Cu2+和Fe3+在同一浓度掺杂，对半导体的功函数影响不同，使载体和离子对电子和空穴捕获能力有所差异。
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| 关 键 词： | 催化化学 肖特基势垒 光催化活性 离子掺杂 |
Study on the influence of La3+,Cu2+,Fe3+/TiO2 on Schottky barrier on the surface of metal-semiconductors |
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| KANG Hua,LI Guichun,SHAN Zhiqiang.Study on the influence of La3+,Cu2+,Fe3+/TiO2 on Schottky barrier on the surface of metal-semiconductors[J].Industrial Catalysis,2009,17(7):66-69. |
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| Authors: | KANG Hua LI Guichun SHAN Zhiqiang |
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| Affiliation: | Department of Resource and Environment, Heilongjiang Institute of Science and Technology, Harbin 150027, Heilongjiang, China |
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| Abstract: | The mechanisms for contact between metal and semiconductor surface and formation of Schott-ky barriers were discussed. The influence of ions-doping on the barriers and effects of e-h+ transfer on photocatalytic activity of TiO2 films were studied. The results indicated that different metal substrates had different influence on Schottky barriers;doping ions changed work function of the semiconductor; different doping ions metal with the same concentration changed work function of the semiconductor to different extent, thus changed Schottky barriers, resulting in different photocatalytic activity of TiO2 films. |
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| Keywords: | catalytic chemistry Schottky barrier photocatalytic activity ions doping |
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