Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers |
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| Authors: | N V Alkeev S V Averin A A Dorofeev P Velling E Khorenko W Prost F J Tegude |
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| Affiliation: | (1) Institute of Radio Engineering and Electronics, Russian Academy of Sciences (Fryazino Branch), pl. Vvedenskogo 1, Fryazino, Moscow oblast, 141190, Russia;(2) Pulsar Research Institute, Moscow, 105187, Russia;(3) Solid State Electronics Department, Gerhard-Mercator-University, 47057 Duisburg, Germany |
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| Abstract: | A frequency-dependent impedance analysis (0.1–50 GHz) of an InGaAs/InAlAs-based resonant tunneling diode with a 5-nm-wide well and 5-nm-thick barriers showed that the transport mechanism in such a diode is mostly sequential, rather than coherent, which is consistent with estimates. The possibility of determining the coherent and sequential mechanism fractions in the electron transport through the resonant tunneling diode by its frequency dependence on the impedance is discussed. |
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