Influence of gallium‐doped zinc‐oxide thickness on polymer light‐emitting diode luminescence efficiency |
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| Authors: | Sy‐hann Chen Wei‐chun Chen Chang‐feng Yu Chia‐feng Lin Po‐ching Kao |
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| Affiliation: | 1. Department of Electrophysics, National Chiayi University, , Chiayi, 60004 Taiwan;2. Institute of Optoelectronics and Solid State Electronics, National Chiayi University, , Chiayi, 60004 Taiwan;3. Department of Materials Science and Engineering, National Chung Hsing University, , Taichung, 402 Taiwan |
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| Abstract: | Conducting atomic force microscopy and scanning surface potential microscopy were used to study the local electrical properties of gallium‐doped zinc oxide (GZO) films prepared by pulsed laser deposition (PLD) on a polyimide (PI) substrate. For a PLD deposition process time of 8 min, the root‐mean‐square roughness, coverage percentage of the conducting regions, and mean work function on the GZO surface were 2.33 nm, 96.6%, and 4.82 eV, respectively. When the GZO/PI substrate was used for a polymer light‐emitting diode (PLED), the electroluminescence intensity increased by nearly 20% compared to a standard PLED, which was based on a commercial‐ITO/glass substrate. Microsc. Res. Tech. 76:783–787, 2013. © 2013 Wiley Periodicals, Inc. |
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| Keywords: | conducting atomic force microscopy scanning surface potential microscopy gallium‐doped zinc oxide pulsed laser deposition polymer light‐emitting diode |
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