Effect of thermal annealing on properties of zinc selenide thin films deposited by chemical bath deposition

Zinc selenide films have been deposited on glass substrate by chemical bath deposition method. The resultant films were annealed up to 473 K temperature. The structural properties of zinc selenide thin films have been investigated by X-ray diffraction techniques. The X-ray diffraction spectra showed that zinc selenide thin films are polycrystalline and have a cubic structure. The most preferential orientation is along the (111) direction for all films. The lattice parameter, grain size, and microstrain were calculated and correlated with annealing temperature. The optical properties showed direct band gap values were found to be in the region of 2.69–2.81 eV. The electrical studies shows conductivity increases with increase in annealing temperature. The optoelectric and structural data are discussed from the point of applications based on achieving high performance devices.