Facile Synthesis of γ‐In2Se3 Nanoflowers toward High Performance Self‐Powered Broadband γ‐In2Se3/Si Heterojunction Photodiode |
| |
| Authors: | Shuo Chen Xuemei Liu Xvsheng Qiao Xia Wan Khurram Shehzad Xianghua Zhang Yang Xu Xianping Fan |
| |
| Affiliation: | 1. School of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China;2. State Key Laboratory of Silicon Materials, Hangzhou, P. R. China;3. School of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, P. R. China;4. Laboratory of Glasses and Ceramics, Institute of Chemistry, CNRS‐Université de Rennes I, Rennes Cedex, France |
| |
| Abstract: | An effective colloidal process involving the hot‐injection method is developed to synthesize uniform nanoflowers consisting of 2D γ‐In2Se3 nanosheets. By exploiting the narrow direct bandgap and high absorption coefficient in the visible light range of In2Se3, a high‐quality γ‐In2Se3/Si heterojunction photodiode is fabricated. This photodiode shows a high photoresponse under light illumination, short response/recovery times, and long‐term durability. In addition, the γ‐In2Se3/Si heterojunction photodiode is self‐powered and displays a broadband spectral response ranging from UV to IR with a high responsivity and detectivity. These excellent performances make the γ‐In2Se3/Si heterojunction very interesting as highly efficient photodetectors. |
| |
| Keywords: | γ ‐In2Se3/Si heterojunction high detectivity nanoflowers photodetectors |
|
|
