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Cadmium‐Free InP/ZnSeS/ZnS Heterostructure‐Based Quantum Dot Light‐Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m−2
Authors:Hung Chia Wang  Heng Zhang  Hao Yue Chen  Han Cheng Yeh  Mei Rurng Tseng  Ren Jei Chung  Shuming Chen  Ru Shi Liu
Affiliation:1. Department of Chemistry, National Taiwan University, Taipei, Taiwan;2. Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China;3. Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei, Taiwan;4. Material and Chemical Research Laboratories, Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan;5. Department of Mechanical Engineering and Graduate, Institute of Manufacturing Technology, National Taipei University of Technology, Taipei, Taiwan
Abstract:
Keywords:backlight  Cd‐free quantum dots  inverted light‐emitting diodes  thermal stability  thick‐shelled quantum dots
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