Effect of Oxide Defect Structure on the Electrical Properties of ZrO2 |
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| Authors: | ARUN KUMAR DILIP RAJDEV D L DOUGLASS |
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| Affiliation: | Materials Department, School of Engineering and Applied Science, University of California, Los Angeles, California 90024 |
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| Abstract: | The defect structure of monoclinic ZrO2 was studied by measuring the transfer numbers and electrical conductivity as functions of O2 pressure and temperature. The data suggest a defect structure of doubly ionized oxygen vacancies at low pressures, i.e. <10?19 atm, and singly ionized oxygen interstitials at pressures >10?9 atm. Zirconia is primarily an ionic conductor below #700°C and an electronic conductor at 700° to 1000°C for 10?22≤Po2≤1 atm. |
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