|
|||||
|
|
Junction-temperature measurement of IMPATT diodes |
|
| Authors: | Kenyon N.D. D'Alessio F.J. |
| Affiliation: | Bell Telephone Laboratories, Murray Hill, USA; |
| Abstract: | The breakdown voltage VB of an IMPATT diode is a function of the junction temperature. Pulse techniques are applied to measure VB directly during actual operation, thus giving the temperature within an accuracy of a few per cent. The method also provides a display of 'space-charge resistance at the operating temperature. |
| Keywords: | |